| Ultra Pure SiC (Silicon Carbide) is made via a chemical vapour deposition (CVD) process, a method that produces very uniform material. The combination of excellent thermal, electrical and chemical properties makes CVD SiC well suited to many semiconductor, LED, and optical applications. Features: - Ultra-pure 99.9995% (by GDMS)
- High thermal conductivity
- Low thermal expansion
- Excellent corrosion resistance in plasma applications
- Proven durability in high temperature ammonia environments
- Dimensional stability
- Non-porous, theoretically dense
- Fine grained microstructure
Two Grades Available: - Performance HR SiC – (high resistivity)
- Performance ELR SiC – (extremely low resistivity)
Typical Applications: - Rapid Thermal Process (RTP) components
- Plasma Etch components
- Susceptors and Heating elements
- LED wafer carriers and cover plates
- Sputtering Targets
Morgan Capabilities: - High volume growth capacity
- Patented RMax Process (near-net shape process for high volume ring applications)
- CNC grinding and lapping to very tight tolerances
- Prototype, batch and volume production
- EDM and Ultrasonic machining option available
Information provided by Morgan Advanced Materials |
